EUV Solutions
EUV Resist Tools
EUV Solutions
EUV Resist Tools
EUV Resist Qualification
We provide EUV Resist qualification and printing solutions. Our open field exposure system EUV-TEUVL allows basic resist qualification in order to determine dose to clear. Our interference lithography tool provides an easy to operate patterning solution, allowing to determine printing performance under realistic conditions in the laboratory.
EUV-LET
The EUV Laboratory Exposure Tool (EUV-LET) is our leading solution for in-lab patterning of sub-30nm half-pitches on resists with EUV radiation based on interference lithography schemes like achromatic Talbot lithography. The EUV-LET is developed in cooperation with our research partners at RWTH-Aachen and Fraunhofer ILT.
The EUV-LET resist characterization with closed-loop dose control and can print large area (single exposure fields of larger than 1 mm²) low defectivity patterns in less than 30 seconds exposure time per field (@ 10 mJ/cm²). Required transmission masks for printing of different structure types and sizes can be supplied on specifications.
EUV laboratory interference exposure tool (EUV-LET) in research configuration for process development and exploring limits
Schematic of achromatic Talbot lithography. Stationary interference pattern within a distance window highlighted.
EUV-LET fabricated 35nm and 28nm half-pitch structures (world record for stand-alone lab installations)
EUV-TEUVL
The TEUVL provide a direct and economic solution for in-house actinic EUV resist characterization. Using our medium-power EUV-LAMP with standard 500 mW/(2psr) in 2% bw around 13.5nm allows for accumulating of some 10 mJ/cm² in minutes. EUV-LAMP provides about 1000 hours lifetime with easy source head replacement and maintenance. The standard tool is designed fully clean-room compatible with easy operation through operator touch panel and using the process chamber as load lock for inserting the resist face down. 1:1 structuring option for < 100nm pitch may be applicable with EUV masks in contact to the photoresist.
Stand-alone EUV-TEUVL
Typical grey scale dose-controlled resist exposure with 5 mm diameter fields
Dose contrast curve obtained with TEUVL
Literature on EUV-LET
- S. Brose, S. Danylyuk, J. Tempeler, H. Kim, P. Loosen, L. Juschkin, Enabling laboratory EUV research with a compact exposure tool, Proc. SPIE 9776; 97760R (2016)
DOI: 10.1117/12.2219164 - S. Brose, S. Danylyuk, L. Bahrenberg, R. Lebert, J. Stollenwerk, P. Loosen, L. Juschkin, EUV-LET 2.0 : a compact exposure tool for industrial research at a wavelength of 13.5nm, Proc. SPIE 10957; 109571K (2019)
DOI: 10.1117/12.2513755 - R. Lebert, T. Missalla, C. Phiesel, C. Piel, S. Brose, S. Danylyuk, P. Loosen, K. Bergmann, and J. Vieker, Actinic tools for EUV resist characterization in research and production, Proc. SPIE 10809, 108091V (3 October 2018);
DOI: 10.1117/12.2501800
Literature on EUV-TEUVL
- US7378666, W. Domke, L. Juschkin, Karl Kragler, R. Lebert, M. Meisen, Irradiation device for testing objects coated with light-sensitive paint
- R. Lebert, L. Juschkin, B. Jägle, M. Meisen, V. Berman, U. Bieberle, Inband-EUV Open Frame Resist Exposer TEUVL, Sematech2nd International EUV Symposium, 30.9.2003, Antwerp, Belgium, Vol. 1, p. 308-332 ISBN: 978-1-60423-679
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